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| MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 20 12 3 100 200 150 - 65 to + 150 Unit V V V mA mW O C C O Characteristics (Ta = 25 OC) Parameter DC Current Gain at VCE = 10 V, IC = 20 mA Current Gain Group Q R S Symbol hFE hFE hFE ICBO IEBO fT Cre 1) Min. 50 80 125 - Typ. 7 0.55 1.1 Max. 100 160 250 1 1 1 2 Unit A A GHz pF dB Collector Cutoff Current at VCB = 10 V Emitter Cutoff Current at VEB = 1 V Gain Bandwidth Product at VCE = 10 V, IC = 20 mA Feed-Back Capacitance at VCB = 10 V, f = 1 MHz Noise Figure at VCE = 10 V, IC = 7 mA, f = 1 GHz 1) NF The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 04/10/2006 MMBTSC3356 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 04/10/2006 |
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